IRG4PH40KD specifiche: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A

IRG4PH40KD simili

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IRG4BC10KD
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- Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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IRG4PH40KD datasheet e spec

Fabbricante : IR

Viaggi : TO-247AC

Pins : 3

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 238 KB

Applicazione : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15A