IRG4PSC71KD specifiche: Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60A

IRG4PSC71KD simili

IRG4BC10K
- Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
IRG4BC10KD
- Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 2.39V @ VGE = 15V, IC = 5.0A
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- Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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IRG4BC10SD-L
- Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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- Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A
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IRG4PSC71KD datasheet e spec

Fabbricante : IR

Viaggi : SUPER-247

Pins : 3

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 215 KB

Applicazione : Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60A