| Parte n. | Fabbricante | Applicazione |
|---|
| SMBJ160CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 178 V (min), 197 V (max). Test current 1.0 mA. Bidirectional. |
| P6KE220C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 220 V. Bidirectional. |
| P4KE39 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 39 V. |
| 1N967B | JGD | 0.5W, silicon zener diode. Zener voltage 18V. Test current 7.0mA. +-5% tolerance. |
| ZMM5248C | JGD | Surface mount zener diode. Nominal zener voltage 18 V. Test current 7.0 mA. +-10% tolerance. |
| SMAJ11C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 11 V. Bidirectional. |
| SMBJ26A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 28.9 V (min), 31.9 V (max). Test current 1.0 mA. |
| HER505 | JGD | 5.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 400V. |
| 1N4732C | JGD | 1W zener diode. Nominal zener voltage 4.7V. 2% tolerance. |
| P4KE7.5 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 7.5 V. |
| MMBD1503A | JGD | Surface mount switching diode. Max forward voltage 1.00V at 200mA. |
| HER301 | JGD | 3.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 50V. |
| 1N5523C | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-2% tolerance. |
| SMAJ60CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 60 V. Bidirectional. |
| HER102G | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 100V. |
| S2G | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 1.5 A. |
| 1N979D | JGD | 0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. +-1% tolerance. |
| 1N982A | JGD | 0.5W, silicon zener diode. Zener voltage 75V. Test current 1.7mA. +-10% tolerance. |
| 1N969 | JGD | 0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. +-20% tolerance. |
| 1N4730 | JGD | 1W zener diode. Nominal zener voltage 3.9V. 10% tolerance. |
| HER101L | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 50V. |
| KBP200 | JGD | Single-phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 50V. |
| ZMM5228D | JGD | Surface mount zener diode. Nominal zener voltage 3.9 V. Test current 20 mA. +-20% tolerance. |
| SMBJ5918B | JGD | 1.5W silicon surface mount zener diode. Zener voltage 5.1 V. Test current 73.5 mA. +-5% tolerance. |
| P4KE20A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 20 V. |
| 3EZ19D5 | JGD | 3 W, silicon zener diode. Nominal voltage 19 V, current 40 mA, +-5% tolerance. |
| SMAJ170C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 170 V. Bidirectional. |
| SMBJ8.5 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 9.44 V (min), 11.5 V (max). Test current 1.0 mA. |
| MUR420 | JGD | 4.0A ultra fast rectifier. Max recurrent peak reverse voltage 200V. |
| P4KE13CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 13 V. Bidirectional. |
