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BD241 specifiche: 4mW NPN silicon epitaxial base power transistor
BD241 simili
- BD241
- 4mW NPN silicon epitaxial base power transistor
- BD241A
- 4mW NPN silicon epitaxial base power transistor
- BD241B
- 4mW NPN silicon epitaxial base power transistor
- BD242
- 4mW NPN silicon epitaxial base power transistor
- BD242A
- 4mW NPN silicon epitaxial base power transistor
- BD242B
- 4mW NPN silicon epitaxial base power transistor
BD241 datasheet e spec
Fabbricante : Micro Electronics
Viaggi : TO-220B
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 106 KB
Applicazione : 4mW NPN silicon epitaxial base power transistor
BD241 PDF Download