Percorso:OKDatasheet > Tutti i fornitori > Micro Electronics Scheda > BD242B
BD242B specifiche: 4mW NPN silicon epitaxial base power transistor
BD242B simili
- BD241
- 4mW NPN silicon epitaxial base power transistor
- BD241A
- 4mW NPN silicon epitaxial base power transistor
- BD241B
- 4mW NPN silicon epitaxial base power transistor
- BD242
- 4mW NPN silicon epitaxial base power transistor
- BD242A
- 4mW NPN silicon epitaxial base power transistor
- BD242B
- 4mW NPN silicon epitaxial base power transistor
BD242B datasheet e spec
Fabbricante : Micro Electronics
Viaggi : TO-220B
Pins : 3
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 107 KB
Applicazione : 4mW NPN silicon epitaxial base power transistor
BD242B PDF Download