MTB30N06VL simili

  • MTB30N06VL
    • TMOS V power field effect transistor
  • MTB30P06V
    • TMOS V power field effect transistor
  • MTB30P06V
    • TMOS V power field effect transistor
  • MTB33N10E
    • TMOS E-FET high energy power FET
  • MTB36N06V
    • TMOS V power field effect transistor
  • MTB3N120E
    • TMOS E-FET high energy power FET D2PAK for surface mount
  • MTB3N120E
    • TMOS E-FET high energy power FET D2PAK for surface mount
  • MTB3N60E
    • TMOS E-FET high energy power FET D2PAK for surface mount

MTB30N06VL datasheet e spec

Fabbricante : Motorola 

Viaggi : DPAK 

Pins : 4 

Temperatura : Min -55 °C | Max 175 °C

Dimensione : 288 KB

Applicazione : TMOS V power field effect transistor 

MTB30N06VL PDF Download