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MTB33N10E specifiche: TMOS E-FET high energy power FET
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MTB33N10E datasheet e spec
Fabbricante : Motorola
Viaggi : DPAK
Pins : 4
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 292 KB
Applicazione : TMOS E-FET high energy power FET
MTB33N10E PDF Download