MTD3055EL1 simili

  • MTD3055EL
    • N-channel enhancement-mode silicon gate, 10A, 80V
  • MTD3055EL1
    • N-channel enhancement-mode silicon gate, 10A, 80V
  • MTD3055V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTD3055V
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTD3055VL
    • TMOS V power field effect transistor D2PAK for surface mount
  • MTD3302
    • HDTMOS single N-channel field effect transistor

MTD3055EL1 datasheet e spec

Fabbricante : Motorola 

Viaggi : 368-06 

Pins : 3 

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 417 KB

Applicazione : N-channel enhancement-mode silicon gate, 10A, 80V 

MTD3055EL1 PDF Download