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MTD3055V specifiche: TMOS V power field effect transistor D2PAK for surface mount
MTD3055V simili
- MTD3055EL
- N-channel enhancement-mode silicon gate, 10A, 80V
- MTD3055EL1
- N-channel enhancement-mode silicon gate, 10A, 80V
- MTD3055V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3055V
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3055VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTD3302
- HDTMOS single N-channel field effect transistor
MTD3055V datasheet e spec
Fabbricante : Motorola
Viaggi : DPAK
Pins : 4
Temperatura : Min -55 °C | Max 175 °C
Dimensione : 226 KB
Applicazione : TMOS V power field effect transistor D2PAK for surface mount
MTD3055V PDF Download