MTW32N25E simili

  • MTW32N20E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW32N25E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW32N25E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW33N10E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
  • MTW35N15E
    • TMOS E-FET power field effect transistor TO-247 with isolated mounting hole

MTW32N25E datasheet e spec

Fabbricante : Motorola 

Viaggi : TO-247AE 

Pins : 4 

Temperatura : Min -55 °C | Max 150 °C

Dimensione : 166 KB

Applicazione : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole 

MTW32N25E PDF Download