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MTW35N15E specifiche: TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
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- MTW35N15E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW35N15E datasheet e spec
Fabbricante : Motorola
Viaggi : TO-247AE
Pins : 4
Temperatura : Min -55 °C | Max 150 °C
Dimensione : 185 KB
Applicazione : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW35N15E PDF Download