F1415 specifiche: 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1415 simili

F1410
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1415
- 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1415 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 4

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 42 KB

Applicazione : 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor