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L88016 simili

  • L88016
    • 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
  • L8801P
    • 10 Watt, silicon gate enhancement mode RF power LDMOS transistor

L88016 datasheet e spec

Fabbricante : Polyfet RF 

Viaggi :  

Pins : 4 

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 38 KB

Applicazione : 30 Watt, silicon gate enhancement mode RF power LDMOS transistor 

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