L8801P simili

  • L88016
    • 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
  • L8801P
    • 10 Watt, silicon gate enhancement mode RF power LDMOS transistor

L8801P datasheet e spec

Fabbricante : Polyfet RF 

Viaggi : SO-8 

Pins : 8 

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 43 KB

Applicazione : 10 Watt, silicon gate enhancement mode RF power LDMOS transistor 

L8801P PDF Download