LX802 specifiche: 30 Watt, silicon gate enhancement mode RF power LDMOS transistor

LX802 simili

LX802 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 2

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 40 KB

Applicazione : 30 Watt, silicon gate enhancement mode RF power LDMOS transistor