LX803 simili

  • LX802
    • 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
  • LX803
    • 45 Watt, silicon gate enhancement mode RF power LDMOS transistor

LX803 datasheet e spec

Fabbricante : Polyfet RF 

Viaggi :  

Pins : 2 

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 58 KB

Applicazione : 45 Watt, silicon gate enhancement mode RF power LDMOS transistor 

LX803 PDF Download