WMBT3906 specifiche: PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A

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WMBT3906 datasheet e spec

Fabbricante : WingShing

Viaggi : SOT-89

Pins : 3

Temperatura : Min 0 °C | Max 0 °C

Dimensione : 72 KB

Applicazione : PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A