WMBT5551LT1 specifiche: NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V

WMBT5551LT1 simili

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WMBT5551LT1 datasheet e spec

Fabbricante : WingShing

Viaggi : SOT-23

Pins : 3

Temperatura : Min 0 °C | Max 0 °C

Dimensione : 39 KB

Applicazione : NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V