F1063 simili

  • F1060
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1063
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1065
    • 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1066
    • 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1069
    • 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1063 datasheet e spec

Fabbricante : Polyfet RF 

Viaggi :  

Pins : 6 

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 35 KB

Applicazione : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F1063 PDF Download