F1066 specifiche: 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1066 simili

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F1066
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
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F1066 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 8

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 42 KB

Applicazione : 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor