F1069 specifiche: 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

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F1069
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1069 datasheet e spec

Fabbricante : Polyfet RF

Viaggi :

Pins : 2

Temperatura : Min -65 °C | Max 150 °C

Dimensione : 39 KB

Applicazione : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor