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IRF820FI specifiche: N-channel enhancement mode power MOS transistor, 500V, 2.2A
IRF820FI simili
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IRF820FI datasheet e spec
Fabbricante : ST Microelectronics
Viaggi : ISOWATT220
Pins : 3
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 185 KB
Applicazione : N-channel enhancement mode power MOS transistor, 500V, 2.2A
IRF820FI PDF Download