Percorso:OKDatasheet > Tutti i fornitori > ST Microelectronics Scheda > IRF822
IRF822 specifiche: N-channel enhancement mode power MOS transistor, 500V, 2.8A
Percorso:OKDatasheet > Tutti i fornitori > ST Microelectronics Scheda > IRF822
IRF822 specifiche: N-channel enhancement mode power MOS transistor, 500V, 2.8A
Fabbricante : ST Microelectronics
Viaggi : TO-220
Pins : 3
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 185 KB
Applicazione : N-channel enhancement mode power MOS transistor, 500V, 2.8A