Percorso:OKDatasheet > Tutti i fornitori > ST Microelectronics Scheda > IRF822FI
IRF822FI specifiche: N-channel enhancement mode power MOS transistor, 500V, 1.9A
Percorso:OKDatasheet > Tutti i fornitori > ST Microelectronics Scheda > IRF822FI
IRF822FI specifiche: N-channel enhancement mode power MOS transistor, 500V, 1.9A
Fabbricante : ST Microelectronics
Viaggi : ISOWATT220
Pins : 3
Temperatura : Min -65 °C | Max 150 °C
Dimensione : 185 KB
Applicazione : N-channel enhancement mode power MOS transistor, 500V, 1.9A